Epitaxially grown lead germanate film and deposition method
US6190925A · kind A · utility
15Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Apr 28, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a substantially single crystal PGO film with optimal the ferroelectric properties. The PGO film and adjacent electrodes are epitaxially grown to minimize mismatch between the structures. MOCVD deposition methods and RTP annealing procedures permit a PGO film to be epitaxially grown in commercial fabrication processes. These epitaxial ferroelectric have application in FeRAM memory devices. The present invention deposition method epitaxially grows ferroelectric Pb.sub.5 Ge.sub.3 O.sub.11 thin films along with c-axis orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.