Method for storing information in a semiconductor device
US6190972A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1997 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Oct 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device includes a plurality of conductive layers that are formed on the substrate. Two electrically intercoupled sections of a read-only storage element, such as a fuse element, which together compose the storage element, are each formed in a different one of the conductive layers. The storage element has a storage state, and each section has a conductivity. One can change the storage state of the storage element by changing the conductivity of one of the sections. Additionally, multiple storage elements may be coupled in parallel to form a storage module. Each of the storage elements of the storage module may include multiple storage sections that are each formed in a different conductive layer. The storage elements may store the version number of the mask set used to form the semiconductor device. Alternatively, a conductive layer is formed on a substrate, and one or more read-only storage elements are formed in the conductive layer. Each of the storage elements is formed in a predetermined state such that they collectively store a digital value that identifies a mask used to form the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.