Method of fabricating a high quality thin oxide
US6190973A · kind A · utility
67Cited by
7References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1998 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Dec 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of forming a high quality thin oxide on a semiconductor body. A sacrificial oxide is formed on the semiconductor and then etched to eliminate the surface contamination of the semiconductor body. Then, an EEPROM oxide is formed following by an arsenic implant. Next the EEPROM oxide on the semiconductor body is then prepared by thin oxide growth. The thin oxide is preferably formed in a steam ambient. Subsequently, the oxide is annealed under nitrous oxide ambient using a combination of in-situ and RTP annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.