Damascene process
US6191029A · kind A · utility
21Cited by
3References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 9, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Sep 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A damascene process is described. An opening is formed in a dielectric layer. The opening is filled with a conductive plug. The conductive plug is etched back to substantially reduce the thickness of the conductive plug in the dielectric layer. A conformal top barrier layer is formed over the conductive plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.