Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants
US6194259A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1997 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Jun 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0191
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a retrograde channel concentration profile in the NMOS region of a semiconductor device and forming a shallow LDD regions in a PMOS region of the semiconductor device. The retrograde channel concentration profile in the NMOS regions is formed by implanting nitrogen and boron ions into the NMOS region at selected concentrations and implantation energy levels. The nitrogen ions are implanted in the NMOS region at a selected concentration in the range of 1.times.10.sup.13 to 2.times.10.sup.15 ions per cm.sup.2 and at a selected implantation energy in the range of 10-100 KeV. The boron ions are implanted in the NMOS region at a selected concentration in the range of 1.times.10.sup.12 to 1.times.10.sup.14 ions per cm.sup.2 and at a selected implantation energy in the range of 5-50 KeV. The shallow LDD regions in the PMOS region are formed by implanting nitrogen and boron ions into the PMOS region at selected concentrations and implantation energy levels. The nitrogen ions are implanted in the PMOS region at a selected concentration in the range of 1.times.10.sup.13 to 2.times.10.sup.15 ions per cm.sup.2 and at a selected implantation energy in the range of 5-50 Kev. …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.