Device performance by employing an improved method for forming halo implants
US6194278A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 1999 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Jun 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the present invention, a method for forming a halo implant for semiconductor devices includes the steps of providing a substrate having a gate stack formed thereon. The gate stack includes a gate conductor. The gate stack extends a distance in a first direction on a surface of the substrate. Dopants of a first conductivity and dosage are provided at an acute angle relative to a normal to the surface of the substrate. The dopants are also directed at an angle of between about 30 degrees to about 60 degrees relative to the first direction such that the dopants are implanted below the gate conductor to form a halo implant for preventing current leakage for a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.