Method of fabricating semiconductor device
US6194298A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 1999 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | May 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is described. A conductive layer is formed on a substrate. A spacer is formed on a sidewall of the conductive layer. A thin metallic layer is formed over the substrate. An ion implantation step is performed. A first seeding layer is formed between the first metallic layer and the conductive layer. A second seeding layer is formed between the first metallic layer and the substrate. A second metallic layer is formed over the substrate. An annealing step is performed to form a self-aligned silicide layer on the conductive layer. The first metallic layer and the second metallic layer that do not react are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.