Method of forming amorphous conducting diffusion barriers
US6194310A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2000 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Jun 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1078
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming conducting diffusion barriers is provided. The method produces substantially amorphous conducting diffusion barriers by depositing materials with varying ratios of elements throughout the diffusion barrier. Diffusion barriers of metal nitride, metal silicon nitride, are deposited using CVD, PECVD, or ALCVD, by depositing material with a first ratio of elements and then depositing substantially identical material with a different ratio of elements. The actual elements used are the same, but the ratio is changed. By changing the ratio of the elements within the same diffusion barrier, density variations are produced, and the material is not able to form undesirable polycrystalline structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.