Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US6194742A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Jun 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or Al.sub.x In.sub.y Gal.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using Al.sub.x In.sub.y Ga.sub.1-x-y N (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interfacial layer varies from 0.01-10.0 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.