Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
US6194783A · kind A · utility
5Cited by
26References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 23, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Oct 23, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12229
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Aluminum-containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.