Method and apparatus for ionized physical vapor deposition
US6197165A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Mar 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3429
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering coating material from a compound sputtering source formed of an annular ring-shaped target with a circular target at its center, increasing deposition rate and coating uniformity. Each target is separately energized to facilitate control of the distribution of material sputtered into the chamber and the uniformity of the deposited film. The sputtered material from the targets is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind an annular dielectric window in the chamber wall in the central opening of the annular target and surrounding the circular target. A Faraday type shield physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.