John Drewery
70Patents
19h-index
74Co-inventors
87Inventor score
Filing activity: May 6, 1998 → Jun 6, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6790773B1 | Process for forming barrier/seed structures for integrated circuits | Electricity | 96 | Expired |
| US9583357B1 | Systems and methods for reverse pulsing | Electricity | 90 | Active |
| US7449098B1 | Method for planar electroplating | Electricity | 86 | Expired |
| US9761459B2 | Systems and methods for reverse pulsing | Electricity | 85 | Active |
| US6287435A | Method and apparatus for ionized physical vapor deposition | Electricity | 77 | Expired |
| US6080287A | Method and apparatus for ionized physical vapor deposition | Electricity | 73 | Expired |
| US7211509B1 | Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds | Electricity | 50 | Expired |
| US6525407B1 | Integrated circuit package | Emerging Cross-Sectional Technologies | 38 | Expired |
| US6197165A | Method and apparatus for ionized physical vapor deposition | Electricity | 38 | Expired |
| US6417626B1 | Immersed inductively—coupled plasma source | Electricity | 27 | Expired |
| US6743661B1 | Method of fabricating an integrated circuit package utilizing an interposer surrounded by a flexible dielectric material with conductive posts | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6719886B2 | Method and apparatus for ionized physical vapor deposition | Electricity | 24 | Expired |
| US7682498B1 | Rotationally asymmetric variable electrode correction | Chemistry; Metallurgy | 22 | Active |
| US7449099B1 | Selectively accelerated plating of metal features | Electricity | 22 | Expired |
| US7405163B1 | Selectively accelerated plating of metal features | Electricity | 22 | Active |
| US8728958B2 | Gap fill integration | Electricity | 22 | Active |
| US6709565B2 | Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation | Electricity | 21 | Expired |
| US6620736B2 | Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing | Electricity | 21 | Expired |
| US6756307B1 | Apparatus for electrically planarizing semiconductor wafers | Electricity | 20 | Expired |
| US6774039B1 | Process scheme for improving electroplating performance in integrated circuit manufacture | Electricity | 19 | Expired |
| US6764168B1 | Sensor for detecting droplet characteristics | Performing Operations; Transporting | 16 | Expired |
| US6537421B2 | RF bias control in plasma deposition and etch systems with multiple RF power sources | Electricity | 16 | Expired |
| US7799200B1 | Selective electrochemical accelerator removal | Electricity | 15 | Active |
| US7531079B1 | Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation | Electricity | 15 | Active |
| US6652711B2 | Inductively-coupled plasma processing system | Electricity | 15 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.