Method for inductively-coupled-plasma-enhanced ionized physical-vapor deposition
US6197166A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Dec 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and related method are disclosed for performing inductively-coupled-plasma-enhanced ionized physical-vapor deposition process for depositing a material layer on a work piece such as a semiconductor substrate or a thin-film head substrate. Within a PVD process chamber, a plurality of inductive antenna segments axially surround a region between the PVD target/cathode assembly and the work piece. The inductive antenna segments are arranged cylindrically around (or conformlly with respect to the physical-vapor deposition target/cathode) and aligned substantially vertically with respect to the target/cathode assembly and/or the work piece. A first radio-frequency (RF) power source provides electrical power to half of the antenna segments to create a first inductively-coupled plasma source, a second RF power source provides electrical power to the remaining antenna segments to create a second inductively-coupled-plasma source. The two inductively-coupled-plasma sources are operated together to produce a multi-zone inductively-coupled-plasma source that generates a rotating inductively coupled magnetic field for uniform high-density PVD plasma generation. The system and method of…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.