Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6197181A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 20, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Mar 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/423
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.