Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
US6197603A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Sep 18, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/0735
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Dispersion of a load may be kept within a predetermined allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane against a wafer by applying a pressure load to a plurality of places on a plane of the pressure members on the side opposite the wafer in a probe test step, burn-in test step which represent typical semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.