Process for manufacturing planar fast recovery diode using reduced number of masking steps

US6197649A · kind A · utility

Assignee

• International Rectifier Corporation · US

Inventors

• Richard Francis · Manhattan Beach, US
• Chiu Ng · El Segundo, US

Key dates

• Filing date: Aug 5, 1998
• Grant date: Mar 6, 2001
• Expiry date: Aug 5, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/043

Abstract

A fast recovery diode (FRED) is fabricated by a process using a reduced number of masking steps. The FRED is a vertical conduction device in which P type anode regions are isolated using either LOCOS oxidation or deposited low temperature oxide. The first masking step defines the anode and isolation regions, and a second masking step defines the aluminum contact layer. For devices having a breakdown voltage greater than 800 volts, a third masking step is included which defines the passivated area.