Method of forming planar isolation and substrate contacts in SIMOX-SOI.

US6197656A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James W. Adkisson · Jericho, US
• Jerome B. Lasky · South Burlington, US
• Paul W. Pastel · Saint Johnsbury Center, US
• Jed H. Rankin · South Burlington, US

Key dates

• Filing date: Mar 24, 1998
• Grant date: Mar 6, 2001
• Expiry date: Mar 24, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76267
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Oxygen implantation can be used to form a buried oxide layer in a substrate. A dielectric masking material is used to shape the buried oxide layer by changing the depth at which ions can implant based on the shape of the dielectric masking layer.