CVD-Ti film forming method
US6197674A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Jul 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a CVD-Ti film includes the steps of loading a Si wafer into a chamber, setting an interior of the chamber at a predetermined reduced-pressure atmosphere, introducing TiCl.sub.4 gas, H.sub.2 gas, and Ar gas into the chamber, and generating a plasma of the introduced gas in the chamber to form a Ti film in a hole formed in an SiO.sub.2 film on the wafer. A wafer temperature is set to 400.degree. to 800.degree., a supplied power is set to 100 W to 300 W, an internal chamber pressure is set to 0.5 Torr to 3.0 Torr, a flow rate ratio of TiCl.sub.4 gas to a sum of H.sub.2 gas and Ar gas is 1:100 to 1:300, and a flow rate ratio of H.sub.2 gas to Ar gas is 1:1 to 2:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.