Chemically preventing Cu dendrite formation and growth by double sided scrubbing
US6197690A · kind A · utility
9Cited by
4References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Dec 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by double sided scrubbing with a chemical agent. Embodiments include removing portions up to 60 .ANG. of silicon oxide by double sided scrubbing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, and dionized water, with or without a surfactant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.