Chemically amplified resist compositions and process for the formation of resist patterns
US6200725A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1997 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Nov 28, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a --CH.sub.2 --R.sub.1 ' group wherein R.sub.1 ' is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm.sup.2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.