Removal of dielectric oxides

US6200891A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Rangarajan Jagannathan · Hopewell Junction, US
• Karen P. Madden · Poughquag, US
• Kenneth McCullough · Fishkill, US
• Harald Okorn-Schmidt · Putnam Valley, US
• Keith R. Pope · Danbury, US
• David L. Rath · Stormville, US

Key dates

• Filing date: Aug 13, 1998
• Grant date: Mar 13, 2001
• Expiry date: Aug 13, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31111
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.