Radical-assisted sequential CVD
US6200893A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Mar 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.