Polishing polymer surfaces on non-porous CMP pads
US6200901A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1998 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Jun 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of oxidizing the surface of a photoresist material on a semiconductor substrate to alter the photoresist material surface to be substantially hydrophillic. Oxidation of the photoresist material surface substantially reduces or eliminates stiction between a planarizing pad and the photoresist material surface during chemical mechanical planarization. This oxidation of the photoresist material may be achieved by oxygen plasma etching or ashing, by immersing the semiconductor substrate in a bath containing an oxidizing agent, or by the addition of an oxidizing agent to the chemical slurry used during planarization of the resist material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.