Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
US6200911A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1998 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Apr 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.