Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films

US6201276A · kind A · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Vishnu K. Agarwal · Boise, US
• Gurtej S. Sandhu · Boise, US
• Garo Derderian · Boise, US

Key dates

• Filing date: Jul 14, 1998
• Grant date: Mar 13, 2001
• Expiry date: Jul 14, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/03

Abstract

A capacitor for a semiconductor device is fabricated by a method which reduces the interaction of a capacitor electrode and a dielectric layer in the capacitor. One or more passivation layers are formed at the interface between the dielectric layer and an electrode in the capacitor by exposing the dielectric layer or electrode to a reactive environment during fabrication in order to form a passivation layer thereon prior to forming an overlying dielectric layer or electrode. The passivation layer reduces the diffusion of oxygen from the dielectric layer to the electrode, resulting in reduced current leakage in the capacitor.