Semiconductor component having a small forward voltage and high blocking ability

US6201279A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Oct 22, 1999
• Grant date: Mar 13, 2001
• Expiry date: Oct 22, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

The semiconductor component has a small forward voltage and a high blocking ability. At least one drift path suitable for taking up voltage is formed in a semiconductor body between two electrodes that are arranged at a distance from one another. At least one semi-insulating layer is provided parallel to the drift path. The semi-insulating layer leads to a linear rise in the potential between the two electrodes when a reverse voltage is applied.