Ferroelectric thin films and solutions: compositions
US6203608A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 15, 1998 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Apr 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pb.sub.v Ca.sub.w Sr.sub.X La.sub.Y)(Zr.sub.Z Ti.sub.1-Z)O.sub.3, wherein 0.9.ltoreq.V.ltoreq.1.3, 0.ltoreq.W.ltoreq.0.1, 0.ltoreq.X.ltoreq.0.1, 0<Y.ltoreq.0.1, 0<Z.ltoreq.0.9 and at least either of W and X is not 0, is formed from a solution where thermally decomposable organometallic compounds of respective metals constituting said metal oxide, hydrolyzable organometallic compounds thereof, and partially hydrolyzed products and/or polycondensation products of said hydrolyzable organometallic compounds are dissolved in an organic solvent in such a proportion as to provide the metal atom ratio represented by the above-mentioned formula.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.