Tom E. Davenport
5Patents
3h-index
10Co-inventors
50Inventor score
Filing activity: Mar 15, 1996 → Oct 14, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5969935A | Use of calcium and strontium dopants to improve retention performance in a PZT ferroelectric film | Electricity | 12 | Expired |
| US6203608A | Ferroelectric thin films and solutions: compositions | Electricity | 10 | Expired |
| US5800683A | Use of calcium and strontium dopants to improve retention performance in a PZT ferroelectric film | Electricity | 6 | Expired |
| US10347829B1 | Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing steps | Electricity | 0 | Active |
| US9595576B2 | Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.