Processing systems with dual ion sources
US6203862A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1998 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Aug 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3142
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, first and second ion sources located in the chamber, and a power source for energizing the first and second ion sources. Each ion source ionizes the process gas to produce ions for processing a substrate disposed on the substrate holder. The first and second ion sources include first and second anodes, respectively. The power source energizes the first and second anodes in a time multiplexed manner, such that only one of the first and second ion sources is energized at any time and interactions between ion sources are eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.