Exposure method, exposure apparatus, and mask
US6204912A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1997 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | May 8, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70791
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exposure method, exposure apparatus and mask are suitable for manufacturing an active matrix liquid crystal display including, for example, a gate electrode layer and a source/drain electrode layer. A stitching portion between unit patterns in a second layer is offset from the stitching portion in a first layer by a predetermined distance. The stitching portions of the second layer are always positioned over unit patterns of the first layer. Accordingly, the contrast gap that occurs at the stitching portion as a boundary is defined only by an error in the exposure position of the second layer. The contrast gap is not affected by an error in the exposure position of the first layer, unlike the conventional method. Because the contrast gap caused by the error in the exposure position of the first layer is eliminated, the total contrast gap that occurs at the stitching portion as a boundary is significantly reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.