Method of determining oxygen precipitation behavior in a silicon monocrystal
US6206961A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Nov 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of determining oxygen precipitation behavior in a silicon monocrystal through use of a programmed computer. According to this method, an initial oxygen concentration of a silicon monocrystal, an impurity concentration or resistivity of the silicon monocrystal, and conditions of heat treatment performed on the silicon monocrystal are input, and an amount of precipitated oxygen and bulk defect density of the silicon monocrystal after the heat treatment are calculated based on the input data. The method enables quick, simple, and accurate determination of an amount of precipitated oxygen and bulk defect density in silicon during or after heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.