Method of stripping a photoresist from a semiconductor substrate using dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide
US6207358A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Sep 17, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the fabrication of semiconductor devices, a method of forming a fine pattern on a semiconductor substrate includes the steps of exposing and developing a photoresist deposited on a film of a semiconductor substrate in order to remove selected portions of the photoresist, etching portions of the film left exposed when the selected portions of the photoresist are removed, and subsequently removing any of the photoresist remaining on the semiconductor substrate with dimethylacetamide, or a combination of monoethanolamine and dimethylsulfoxide. Such stripping solutions are capable of removing photoresists in the Deep-UV group as well as the conventionally used photoresists in the I-line group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.