Prevention of Cu dendrite formation and growth
US6207569A · kind A · utility
9Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising HF and H.sub.2 O. Embodiments include removing up to 50 .ANG. of silicon oxide by treating the wafer in a spray acid processor with a solution containing HF and deionized water at a water to acid ratio of about 100:1 to about 250:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.