Photoresist ashing process for organic and inorganic polymer dielectric materials
US6207583A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 3, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Sep 3, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for removal of photoresist present on a polymer dielectric on a semiconductor substrate and for removal of photoresist residues on the inside walls of microvias formed in the dielectric layer. The process is conducted by generating a plasma in a plasma generator from a gas comprising one or more fluorine compound containing etchant gases and etching the substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias formed in the dielectric layer. The etching is conducted at a temperature of from about 0.degree. C. to about 90.degree. C. and at a pressure of from about 10 torr or less, to thereby remove the photoresist present on the dielectric layer and on the inside walls of the microvias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.