Method for forming a dielectric
US6207587A · kind A · utility
50Cited by
30References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1997 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Jun 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a selected dielectric that includes the steps of contacting a suitable substrate having a silicon containing layer with a gas mixture containing atomic nitrogen, nitric oxide and their reactive constituents at a pressure and temperature sufficient for effective dielectric layer formation for the selected dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.