Method of forming a doped metal oxide dielectric film
US6207589A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-k dielectric film is provided which remains amorphous at relatively high annealing temperatures. The high-k dielectric film is a metal oxide of either Zr or Hf, doped with a trivalent metal, such as Al. Because the film resists the formation of a crystalline structure, interfaces to adjacent films have fewer irregularities. When used as a gate dielectric, the film can be made thin to support smaller transistor geometries, while the surface of the channel region can be made smooth to support high electron mobility. Also provided are CVD, sputtering, and evaporation deposition methods for the above-mentioned, trivalent metal doped high dielectric films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.