Flash memory cells having a modulation doped heterojunction structure
US6207978A · kind A · utility
13Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 1, 2000 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Mar 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
Abstract
A flash memory device and a method to manufacture the flash memory device. The flash memory device includes a modulation-doped heterostructure formed in a semiconductor substrate, a layer of tunnel oxide, a floating gate, a layer of dielectric, a control gate and source and drain regions formed in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.