Inventor · Cupertino, CA, US

Richard Fastow

91Patents
18h-index
89Co-inventors
87Inventor score

Filing activity: Jan 31, 2000 → Mar 28, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7414281B1 Flash memory with high-K dielectric material between substrate and gate Electricity 531 Expired
US6275414A Uniform bitline strapping of a non-volatile memory cell Electricity 111 Expired
US6996004B1 Minimization of FG-FG coupling in flash memory Physics 109 Expired
US6438031B1 Method of programming a non-volatile memory cell using a substrate bias Physics 83 Expired
US6449188B1 Low column leakage nor flash array-double cell implementation Physics 71 Expired
US6252803A Automatic program disturb with intelligent soft programming for flash cells Physics 66 Expired
US6583479B1 Sidewall NROM and method of manufacture thereof for non-volatile memory cells Electricity 49 Expired
US10651153B2 Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding Electricity 44 Active
US6538270B1 Staggered bitline strapping of a non-volatile memory cell Electricity 37 Expired
US6438037B1 Threshold voltage compacting for non-volatile semiconductor memory designs Physics 36 Expired
US6593606B1 Staggered bitline strapping of a non-volatile memory cell Electricity 35 Expired
US6570211B1 2Bit/cell architecture for floating gate flash memory product and associated method Electricity 32 Expired
US6285588A Erase scheme to tighten the threshold voltage distribution of EEPROM flash memory cells Physics 28 Expired
US7009271B1 Memory device with an alternating Vss interconnection Electricity 27 Expired
US6452840B1 Feedback method to optimize electric field during channel erase of flash memory devices Physics 25 Expired
US6646914B1 Flash memory array architecture having staggered metal lines Physics 24 Expired
US6363014B1 Low column leakage NOR flash array-single cell implementation Physics 22 Expired
US6937518B1 Programming of a flash memory cell Physics 18 Expired
US7283398B1 Method for minimizing false detection of states in flash memory devices Physics 16 Expired
US7272060B1 Method, system, and circuit for performing a memory related operation Physics 14 Expired
US6477083B1 Select transistor architecture for a virtual ground non-volatile memory cell array Physics 13 Expired
US6510085B1 Method of channel hot electron programming for short channel NOR flash arrays Physics 13 Expired
US6294430A Nitridization of the pre-ddi screen oxide Emerging Cross-Sectional Technologies 13 Expired
US6207978A Flash memory cells having a modulation doped heterojunction structure Electricity 13 Expired
US6750157B1 Nonvolatile memory cell with a nitridated oxide layer Electricity 12 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.