Semiconductor device having a low dielectric constant material
US6208030A · kind A · utility
16Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Oct 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a reduced resistance-capacitance time constant is formed by treating a dielectric layer to reduce its dielectric constant. Embodiments include exposing a deposited dielectric layer to ionic radiation, as with Helium ion implantation, to form voids within the layer, thereby reducing its dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.