Patent · US Expired

Method of determining the doping concentration across a surface of a semiconductor material

US6208154A · kind A · utility

1Cited by

17References

13Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Sunil N. Shabde · Cupertino, US
Yowjuang W. Liu · San Jose, US
Ting Tsui · Plano, US

Key dates

Filing date	Aug 10, 1998
Grant date	Mar 27, 2001
Priority date	—
Expiry date	Aug 10, 2018

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/854
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method (100) of determining a doping concentration of a semiconductor material (101) includes the steps of moving carriers (102) in the material, wherein a number of carriers is a function of the doping concentration of the material (101). The carriers are deflected (130) toward a surface (110) of the material (101) and an accumulated charge profile on the surface of the material, due to the deflected carriers, is detected (140) and used to calculate (180) the doping concentration across a surface (110) of the material (101).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.