Method for producing structures having a high aspect ratio and structure having a high aspect ratio
US6210595A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1998 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Sep 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing structures having a high aspect ratio includes the following steps: a material of the structure to be produced is provided in the form of a layer, a mask is applied to the layer, the layer is subjected to dry etching using the mask, thereby forming redepositions of the layer material on side walls of the mask and the mask is removed, so that a structure having a high aspect ratio is left behind. The method enables very high (.gtoreq.1 .mu.m) and very thin (.ltoreq.50 nm) structures to be produced in a relatively simple and rapid manner in only very few process steps and with only one mask technique. Structures having such large aspect ratios, particularly when they are composed of a conductive material, cannot be produced, or can be produced only with a high outlay, by using other methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.