Forming metal silicide resistant to subsequent thermal processing
US6210813A · kind A · utility
5Cited by
14References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1998 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Sep 2, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metal silicide film and method of forming the same are provided. The method comprises depositing metal silicide layers onto a substrate assembly with alternating layers of silicon. The resulting metal silicide film has a disrupted grain structure and smaller grain sizes than prior art films of the same thickness, which increases the resistance of the material to stress cracks in subsequent thermal processing and reduces the overall residual stress of the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.