Method for forming a borderless contact
US6211021A · kind A · utility
11Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Jul 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a borderless contact is described. An ion implantation process and a thermal process are performed on a device isolation structure to form a silicon nitride layer therein. During a process of forming a borderless contact window, the silicon nitride layer can serve as an etching stop layer to protect the device isolation structure from overetching. As a result, no recess is formed, and leakage current is avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.