Field emission device with buffer layer and method of making
US6211608A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1998 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Jun 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30403
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.