Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same
US6214108A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 26, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | May 26, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.