Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device
US6214661A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 21, 2000 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Jan 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
In a method of forming a microelectronic structure of a Pt/BSTO/Pt capacitor stack for use in a DRAM device, the improvement comprising substantially eliminating or preventing oxygen out-diffusion from the BSTO material layer, comprising: PA1 a) preparing a bottom Pt electrode formation; PA1 b) subjecting the bottom Pt electrode formation to an oxygen plasma treatment to form an oxygen enriched Pt layer on the bottom Pt electrode; PA1 c) depositing a BSTO layer on said oxygen enriched Pt layer; PA1 d) depositing an upper Pt electrode layer on the BSTO layer; PA1 e) subjecting the upper Pt electrode layer to an oxygen plasma treatment to form an oxygen incorporated Pt layer; and PA1 f) depositing a Pt layer on the oxygen incorporated Pt layer upper Pt elect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.