MOSFET having self-aligned gate and buried shield and method of making same
US6215152A · kind A · utility
55Cited by
8References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 5, 1998 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Aug 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET has a buried shield plate under the gate and over the drain with the gate being formed on the periphery of the buried shield plate as a self-aligned structure with minimal or no overlap of the gate over the shield plate. Methods of fabricating the MOSFET are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.