Process for thin film formation by sputtering
US6217719A · kind A · utility
8Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 1999 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | May 20, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/352
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is provided for forming a thin film having refractive index thereof varying continuously or stepwise in a thickness direction. The process comprises sputtering in a vacuum chamber by introducing, during film formation, at least two kinds of gases selected from a nitrogen-containing gas, an oxygen-containing gas, and a fluorine-containing gas with the flow rate ratio of the gases varied continuously or stepwise. This process enables variation of the refractive index in the thickness direction, simply without difficulty.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.