Creation of an etch hardmask by spin-on technique
US6218078A · kind A · utility
11Cited by
19References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1997 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Sep 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for etching structures in a layer of a semiconductor device are disclosed. The method and system include spinning-on a hardmask layer, patterning the hardmask layer, and etching the layer. The hardmask layer is disposed above the layer and has a high etch selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.