Electrode and capacitor structure for a semiconductor device and associated methods of manufacture
US6218256A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 13, 1999 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Apr 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
An electrode and capacitor structure, and methods of manufacture thereof, are disclosed for a semiconductor device. The capacitor includes a dielectric layer sandwiched between opposing first and second electrically conductive electrodes. At least one of the electrodes includes a thin, oxygen-annealed, refractory metal nitride barrier layer disposed adjacent the dielectric. Preferabaly, the barrier comprises two thin layers of seperately oxygen-annealed, refractory metal nitride. In particular methods of manufacturing the electrode and capacitor structures, a single process chamber is used for both fabrication of the barrier layer(s) and deposition of overlying metalization for the electrode. The barrier layer, in one particular embodiment, is formed from precursor gases of titanium nitride and exposure to an oxidizing gas such as oxygen, ozone or nitrous oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.